N
O
T RE
CO
MMENDED F
O
R NEW DE
S
I
G
N
NOT RECOMMENDED FOR NEW DESIGN
2
RF Device Data
Freescale Semiconductor
MRF9030NR1
Table 5. Electrical Characteristics (Tc
= 25
°c Unless Otherwise Noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS
= 65 Vdc, V
GS
= 0 Vdc)
IDSS
?
?
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS
= 26 Vdc, V
GS
= 0 Vdc)
IDSS
?
?
1
μAdc
Gate-Source Leakage Current
(VGS
= 5 Vdc, V
DS
= 0 Vdc)
IGSS
?
?
1
μAdc
On Characteristics
Gate Threshold Voltage
(VDS
= 10 Vdc, I
D
= 100
μAdc)
VGS(th)
2
2.9
4
Vdc
Gate Quiescent Voltage
(VDS
= 26 Vdc, I
D
= 250 mAdc)
VGS(Q)
3
3.8
5
Vdc
Drain-Source On-Voltage
(VGS
= 10 Vdc, I
D
= 0.7 Adc)
VDS(on)
?
0.23
0.4
Vdc
Forward Transconductance
(VDS
= 10 Vdc, I
D
= 2 Adc)
gfs
?
2.7
?
S
Dynamic Characteristics
Input Capacitance
(VDS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Ciss
?
49
?
pF
Output Capacitance
(VDS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Coss
?
27
?
pF
Reverse Transfer Capacitance
(VDS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Crss
?
1.2
?
pF
Functional Tests (In Freescale Test Fixture)
Two-Tone Common-Source Amplifier Power Gain
(VDD
= 26 Vdc, P
out
= 30 W PEP, I
DQ
= 250 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
Gps
18
20
?
dB
Two-Tone Drain Efficiency
(VDD
= 26 Vdc, P
out
= 30 W PEP, I
DQ
= 250 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
η
37
41
?
%
3rd Order Intermodulation Distortion
(VDD
= 26 Vdc, P
out
= 30 W PEP, I
DQ
= 250 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
IMD
?
-31
-28
dBc
Input Return Loss
(VDD
= 26 Vdc, P
out
= 30 W PEP, I
DQ
= 250 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
IRL
?
-13
-9
dB
Two-Tone Common-Source Amplifier Power Gain
(VDD
= 26 Vdc, P
out
= 30 W PEP, I
DQ
= 250 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
Gps
?
20
?
dB
Two-Tone Drain Efficiency
(VDD
= 26 Vdc, P
out
= 30 W PEP, I
DQ
= 250 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
η
?
40.5
?
%
3rd Order Intermodulation Distortion
(VDD
= 26 Vdc, P
out
= 30 W PEP, I
DQ
= 250 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
IMD
?
-31
?
dBc
Input Return Loss
(VDD
= 26 Vdc, P
out
= 30 W PEP, I
DQ
= 250 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
IRL
?
-12
?
dB
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